, li ne. silico n plana r zene r diode s bzx85 c 2v 7 t o 51 v do-4 1 1.3 w thes e zener s ar e bes t suite d fo r industria l purpose , militar y & spac e applications . whe n hermeticall y seale d i n glas s wit h doubl e stud . thi s passivate d chi p provide s excellen t stabilit y & reliability . absolut e maximu m rating s (ta=2 5 de g c ) descriptio n powe r dissipatio n (1 ) surg e powe r dissipatio n puls e widt h =10m s operatin g an d storag e junctio n temperatur e rang e maximu m lea d temperatur e fo r solderin g durin g 1 0 se c @ 4m m fro m cas e therma l resistanc e junctio n t o ambien t (1 ) forwar d voltag e @ if=200m a 11 ) o n infinit e heatsin k wit h symbo l pt a p s tj.tst g t l rth(j-a ) v f valu e 1. 3 1 0 -55to+17 5 23 0 115. 4 1. 0 uni t w w deg c deg c de g c/m w v 4m m lea d lengt h electrica l characteristic s (ta=2 5 de g c unles s otherwis e specified ) devic e bzx85 c 2v 7 bzx85 c 3v o bzx85 c 3v 3 bzx85 c 3v 6 bzx85 c 3v 9 bzx85 c 4v 3 bzx85 c 4v 7 bzx85 c 5v 1 bzx85 c sv 6 bzx85 c 6v 2 bzx85 c 6v 8 bzx85 c 7v 5 bzx85 c 8v2 bzx85 c 9v 1 bzx85c1 0 bzx85c1 1 bzx85 c 1 2 bzx85c1 3 bzx85 c 1 5 bzx85 c 1 6 bzx85c1 8 bzx85 c 2 0 bzx85 c 2 2 bzx85 c 2 4 v2 t @izt * mi n ma x (v ) (v ) 2.5 0 2.9 0 2.8 0 3.2 0 3.1 0 3.5 0 3.4 0 3.8 0 3.7 0 4.1 0 4.0 0 4.6 0 4.4 0 5.0 0 4.8 0 5.4 0 5.2 0 6.0 0 5.8 0 6.6 0 6.4 0 7.2 0 7.0 0 7.9 0 7.7 0 8.7 0 8.5 0 9.6 0 9.4 0 10.6 0 10.4 0 11.6 0 11.4 0 12.7 0 12.4 0 14.1 0 13.8 0 15.6 0 15.3 0 17.1 0 16.8 0 19.1 0 18.8 0 21.2 0 20.8 0 23,3 0 22.8 0 25.6 0 rz t @izt * ma x (ohm ) 2 0 2 0 2 0 2 0 1 5 1 3 1 3 1 0 7 4 3. 5 3 5 5 7. 5 8 9 1 0 1 5 1 5 2 0 2 4 2 5 2 5 iz t rz k iz k @iz k (ma ) 8 0 8 0 8 0 7 0 6 0 5 0 4 5 4 5 4 5 3 5 3 5 3 5 2 5 2 5 2 5 2 0 2 0 2 0 1 5 1 5 1 5 1 0 1 0 1 0 ma x (ohm ) 40 0 40 0 40 0 50 0 50 0 50 0 50 0 50 0 40 0 30 0 30 0 20 0 20 0 20 0 20 0 30 0 35 0 40 0 50 0 50 0 50 0 60 0 60 0 60 0 (ma ) 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 temp . coef f o f zene r voltag e ty p (%/de g c ) -0.0 7 -0.0 7 -0.0 6 -0.0 6 -0.0 5 -0.0 3 -0.0 1 +0.0 1 +0.0 3 +0.0 4 +0.0 5 +0.0 5 +0.0 6 +0.0 6 +0.0 7 +0.0 7 +0.0 7 +0.0 7 +0.0 8 +0.0 8 +0.0 8 +0.0 8 +0.0 8 +0.0 8 i r ta = 2 5 de g c ma x (ua ) 15 0 10 0 4 0 2 0 1 0 3. 0 3. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 0. 5 0. 5 0. 5 0, 5 0. 5 0. 5 0. 5 0. 5 0. 5 0. 5 @ isodeg c ma x (ua ) 30 0 30 0 20 0 5 0 2 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 v r ( v ) 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 5 2. 0 3. 0 4. 0 4. 5 6. 2 6. 8 7. 0 8. 2 9. 1 1 0 1 1 1 2 1 3 1 5 1 6 1 8 iz m (ma ) 37 0 34 0 32 0 29 0 28 0 25 0 21 5 20 0 19 0 17 0 15 5 14 0 13 0 12 0 10 5 9 7 8 8 7 9 7 1 6 6 6 2 5 6 5 2 4 7 izsm# # (ma ) 287 4 260 4 238 1 219 3 203 3 181 2 166 7 154 3 138 9 126 3 115 7 105 5 95 8 86 8 78 6 71 8 65 6 59 1 53 4 48 7 43 6 39 3 35 8 32 6 n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders. qualit y semi-conductor s downloaded from: http:///
electrica l characteristic s (ta=2 s de g c unles s otherwis e specified ! devic e bzx85 c 2 7 bzx85c 3 0 bzx85 c 3 3 bzx85 c 3 6 bzx85 c 3 9 bzx85 c 4 3 bzx85 c 4 7 bzx85 c 5 1 vz t @izt * mi n (v ) 25.1 0 28.0 0 31.0 0 34.0 0 37.0 0 40.0 0 44.0 0 48.0 0 rz t @izt * ma x ma x (v ) (ohm ) 28.9 0 3 0 32.0 0 3 0 35.0 0 3 5 38.0 0 4 0 41.0 0 5 0 46.0 0 5 0 50.0 0 9 0 54.0 0 11 5 iz t rz k iz k @iz k t b 1 q t | ?4 a > ? note s 1 . cathod e i s marke d b y band . 2 . al l dimension s ar e i n mm . di m a b c d mi n 27.90 4.0 6 0.7 1 2.0 3 ma x ! | i 5.5 1 0.8 7 2.7 2 downloaded from: http:///
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